MOSFET
New generation high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction losses, provide superior switching performance and withstand extreme dv/dt rate and higher avalache energy.
MOSFET is a common type of transistor and is widely used for high-speed switching applications and integrated circuits.IQXPRZ offers 600V to 900V MOSFET in Discretes (TO-247, T0-264 and SOT-227).
Typical Applications
- Power Supplies
- Switch Mode Power Supply
- PC Silver Box
- Solar Inverter
- Welding Inverter
- Induction Heating
- Electronic Ballast
| Device | Drain to Source Voltage, VDSS (V) |
Continuous Drain Current, ID (A) |
Case Temperature, TC(°C) | Drain Source On Resistance, RDS(on)max (Ω) |
Gate Charge, QG (nC) |
Diode Reverse Recovery Time, trr (ns) | Configuration | Package |
| IQIA39N60A3 | 600 | 39 | 25 | 0.07 | 252 | 482 | Single | SOT227 |
| IQIA56N60B3 | 600 | 56 | 25 | 0.05 | 120 | 585 | Parallel | SOT227 |
| IQAA62N60B2 | 600 | 62 | 25 | 0.05 | 120 | 585 | Parallel | TO247-EXT |
| IQIA78N60B3 | 600 | 78 | 25 | 0.035 | 504 | 482 | Parallel | SOT227 |
| IQAA94N60B2 | 600 | 75 | 25 | 0.035 | 252 | 580 | Parallel | TO247-3L |
| IQIA15N80A3 | 800 | 15 | 25 | 0.25 | 88 | 484 | Single | SOT227 |
| IQISA15N80A3 | 800 | 15 | 25 | 0.25 | 88 | 484 | Single | SOT227-VL |
| IQIA30N80B3 | 800 | 30 | 25 | 0.125 | 176 | 484 | Parallel | SOT227 |
| IQAA34N80B1 | 800 | 34 | 25 | 0.125 | 176 | 484 | Parallel | TO247-3L |
| IQIA60N80B3 | 800 | 60 | 25 | 0.063 | 352 | 484 | Parallel | SOT227 |
| IQIA31N90A3 | 900 | 31 | 25 | 0.1 | 270 | 920 | Single | SOT227 |
| IQDA72N90B1 | 900 | 72 | 25 | 0.05 | 540 | 920 | Parallel | TO264 |
| IQIA62N90B3 | 900 | 62 | 25 | 0.05 | 540 | 920 | Parallel | SOT227 |
| Device | Drain to Source Voltage, VDSS (V) |
Continuous Drain Current, ID (A) |
Case Temperature, TC(°C) | Drain Source On Resistance, RDS(on)max (Ω) |
Gate Charge, QG (nC) |
Diode Reverse Recovery Time, trr (ns) | Configuration | Package |
| IQAA62SC120B1 | 1200 | 62 | 25 | 0.049 | 21.6 | 40 | Single | TO247-3L |
| IQIA104SC120B3 | 1200 | 104 | 25 | 0.025 | 44.0 | 40 | Single | SOT227 |
| Device | Drain to Source Voltage, VDSS (V) |
Continuous Drain Current, ID (A) |
Case Temperature, TC(°C) | Drain Source On Resistance, RDS(on)max (Ω) |
Gate Charge, QG (nC) |
Diode Reverse Recovery Time, trr (ns) | Configuration | Package |
| IQAA31SC120A1 | 1200 | 31 | 3.30 | 0.098 | 49.2 | 40 | Single | TO247-3L |
| IQAA31SC120D1 | 1200 | 0.098 | 49.2 | 27 | Single | TO247-3L | ||
| IQAA40SC120B1 | 1200 | 40 | 3.30 | 0.049 | 98.4 | 40 | Parallel | TO247-3L |
| IQAA40SC120D1 | 1200 | 40 | 1.70 | 0.049 | 98.4 | 27 | Copack w/ SiC Diode | TO247-3L |
| IQIA68SC120B3 | 1200 | 68 | 3.30 | 0.025 | 196.8 | 40 | Parallel | SOT227 |
| IQIA68SC120D3 | 1200 | 68 | 1.67 | 0.025 | 196.8 | 27 | Copack w/ SiC Diode |