New generation high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction losses, provide superior switching performance and withstand extreme dv/dt rate and higher avalache energy.

MOSFET is a common type of transistor and is widely used for high-speed switching applications and integrated circuits.IQXPRZ offers 600V to 900V MOSFET in Discretes (TO-247, T0-264 and SOT-227).

Typical Applications

  • Power Supplies
  • Switch Mode Power Supply
  • PC Silver Box
  • Solar Inverter
  • Welding Inverter
  • Induction Heating
  • Electronic Ballast

 

Device Drain to Source Voltage,
V
DSS  (V)
Continuous Drain Current,
I
D (A)
Case Temperature, TC(°C) Drain Source On Resistance,
R
DS(on)max (Ω)
Gate Charge,
Q
G (nC)
Diode Reverse Recovery Time, trr (ns) Configuration Package
IQIA39N60A3 600 39 25 0.07 252 482 Single SOT227
IQIA56N60B3 600 56 25 0.05 120 585 Parallel SOT227
IQAA62N60B2 600 62 25 0.05 120 585 Parallel TO247-EXT
IQIA78N60B3 600 78 25 0.035 504 482 Parallel SOT227
IQAA94N60B2 600 75 25 0.035 252 580 Parallel TO247-3L
IQIA15N80A3 800 15 25 0.25 88 484 Single SOT227
IQISA15N80A3 800 15 25 0.25 88 484 Single SOT227-VL
IQIA30N80B3 800 30 25 0.125 176 484 Parallel SOT227
IQAA34N80B1 800 34 25 0.125 176 484 Parallel TO247-3L
IQIA60N80B3 800 60 25 0.063 352 484 Parallel SOT227
IQIA31N90A3 900 31 25 0.1 270 920 Single SOT227
IQDA72N90B1 900 72 25 0.05 540 920 Parallel TO264
IQIA62N90B3 900 62 25 0.05 540 920 Parallel SOT227
Device Drain to Source Voltage,
V
DSS  (V)
Continuous Drain Current,
I
D (A)
Case Temperature, TC(°C) Drain Source On Resistance,
R
DS(on)max (Ω)
Gate Charge,
Q
G (nC)
Diode Reverse Recovery Time, trr (ns) Configuration Package
IQAA62SC120B1 1200 62 25 0.049 21.6 40 Single TO247-3L
IQIA104SC120B3 1200 104 25 0.025 44.0 40 Single SOT227
Device Drain to Source Voltage,
V
DSS  (V)
Continuous Drain Current,
I
D (A)
Case Temperature, TC(°C) Drain Source On Resistance,
R
DS(on)max (Ω)
Gate Charge,
Q
G (nC)
Diode Reverse Recovery Time, trr (ns) Configuration Package
IQAA31SC120A1 1200 31 3.30 0.098 49.2 40 Single TO247-3L
IQAA31SC120D1 1200 31
1.70
0.098 49.2 27 Single TO247-3L
IQAA40SC120B1 1200 40 3.30 0.049 98.4 40 Parallel TO247-3L
IQAA40SC120D1 1200 40 1.70 0.049 98.4 27 Copack w/ SiC Diode TO247-3L
IQIA68SC120B3 1200 68 3.30 0.025 196.8 40 Parallel SOT227
IQIA68SC120D3 1200 68 1.67 0.025 196.8 27 Copack w/ SiC Diode